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STU6NF10 датащи(PDF) 1 Page - STMicroelectronics |
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STU6NF10 датащи(HTML) 1 Page - STMicroelectronics |
1 / 14 page November 2008 Rev 6 1/14 14 STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET Features ■ Exceptional dv/dt capability ■ 100% avalanche tested Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 Ω 6 A STU6NF10 100 V < 0.250 Ω 6 A DPAK 3 2 1 1 3 IPAK Table 1. Device summary Order codes Marking Package Packaging STD6NF10T4 D6NF10 DPAK Tape and reel STU6NF10 6NF10 IPAK Tube www.st.com |
Аналогичный номер детали - STU6NF10 |
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Аналогичное описание - STU6NF10 |
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