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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LA7386 датащи(PDF) 4 Page - Sanyo Semicon Device |
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LA7386 датащи(HTML) 4 Page - Sanyo Semicon Device |
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4 / 13 page  Continued from preceding page. Parameter Symbol Conditions min typ max Unit Nonlinear emphasis characteristics (3) GNLEMP3 VIN = 50 mVp-p 2 MHz Measure ratio of levels of T3 and T4, difference with GEMP 4.9 6.4 7.9 dB Main linear emphasis characteristics (1) GME1 VIN = 50 mVp-p 500 kHz sine wave Measure ratio of levels of T4 and T3, difference with GEMP 4.9 5.2 5.5 dB Main linear emphasis characteristics (2) GME2 VIN = 50 mVp-p 2 MHz Measure ratio of levels of T4 and T3, difference with GEMP 13.1 13.6 14.1 dB Detail enhancer US mode characteristics (1) GENHS1 Measure the amplitude at T4 when VIN = 15.8 mVp-p 2 MHz sine wave; compare level with GEMP 2.9 3.9 4.9 dB Detail enhancer US mode characteristics (2) GENHS2 Measure the amplitude at T4 when VIN = 15.8 mVp-p 2 MHz sine wave in edit mode; compare level with GEMP 0.7 1.7 2.7 dB White clipping level LWC VIN = 500 mVp-p white 100% video Measure white clipping level at T4 186 193 200 % Dark clipping level LDC VIN = 500 mVp-p white 100% video Measure dark clipping level at T4 –50 –45 –40 % [PB Mode Y] Current consumption PB ICCP Incoming currents at pins 29 and 24 when VCC = 5.0 V 125 155 185 mA Dropout compensation period TDOC T33A: 4 MHz, 300 mVp-p sine wave T3A: 0.5 Vp-p video signal T33A: time from when input went to 0 until T28A output returned 0.6 1.0 ms FM demodulation voltage VDEM4 VIN = 300 mVp-p,f=4 MHz, output voltage 0.9 1.05 1.15 V FM demodulation sensitivity SDEM VIN = 300 mVp-p,f=2 MHz, VDEM2 VIN = 300 mVp-p,f=6 MHz, VDEM6 Calculate SDEM =(VDEM2 –VDEM6)/4 0.11 0.14 0.17 V/MHz FM demodulation linearity LDEM LDEM = V DEM4 –(VDEM2 +V DEM6)/2 VDEM2 –VDEM6 x 100 –3.5 0 +3.5 % Carrier leakage CL VIN = 300 mVp-p,f=4MHz Ratio between 4 MHz component of T1 and SDEM –40 –35 dB Noncorrelation detection level VCORR VIN = 500 mVp-p video signal (ramp waveform) 22 IRE PB YNR characteristics LP/EP (1) GP-YNR1 VIN = 500 mVp-p noise test signal –30 dB S/N difference with S6 on/off 2.5 dB PB YNR characteristics LP/EP (2) GP-YNR2 VIN = 500 mVp-p noise test signal –30 dB S/N difference with EDIT on/off; pin 36 low 1.5 dB PB YNR characteristics SP (3) GP-YNR3 VIN = 500 mVp-p noise test signal, –30 dB S6 edit on/off S/N ratio Pin36 low 1.5 dB Playback through gain GPB Apply VIN = 0.5 Vp-p video signal to pin 3, and determine ratio between pin 28 output level and input level 4.5 6.0 7.5 dB Dropout detection (feedback) level LDOC T33A: 4 MHz, 300 mVp-p sine wave T3A: 0.5 Vp-p video signal Measure input signal level when T33A signal drops momentarily and T28A output goes to 0 30 40 50 mVp-p Nonlinear de-emphasis characteristics (1) GNLDEEM1 NIN = white 50% video + sine wave f = 2 MHz, 158 mVp-p Measure I/O response, and assign output level described above as 0 dB –6.0 –5.0 –4.0 dB Nonlinear de-emphasis characteristics (2) GNLDEEM2 f = 2 MHz, 50 mVp-p –9.0 –8.0 –7.0 dB Double noise canceller characteristics (1) GWNC1 f = 2 MHz, 158 mVp-p –2.3 –1.8 –1.3 dB Double noise canceller characteristics (2) GWNC2 f = 2 MHz, 50 mVp-p –6.0 –5.0 –4.0 dB Continued on next page. LA7386 No.5472 - 4/13 |
Аналогичный номер детали - LA7386 |
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Аналогичное описание - LA7386 |
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