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LA8520 датащи(PDF) 2 Page - Sanyo Semicon Device |
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LA8520 датащи(HTML) 2 Page - Sanyo Semicon Device |
2 / 17 page No. 6075-2/17 LA8520M Parameter Symbol Conditions Ratings Unit min typ max Crosspoint switch voltage gain Gsw Vin = –13 dBV –2.5 –0.5 1.5 dB Crosspoint switch maximum input level Vimax THD = 1.5 % –13 –7 — dBV Crosspoint switch output noise voltage Nosw 20 to 20 kHz 15 60 µVrms Microphone amplifier/TR amplifier voltage gain Gmic Vin = –53 dBV 38 40 42 dB Microphone amplifier/TR output distortion THDmc Vin = –53 dBV — 0.6 1.5 % Microphone amplifier/TR equivalent input noise Nimc Rg = 620 Ω, 20 to 20 kHz 2.5 7.5 µVrms voltage Microphone amplifier/TR maximum voltage gain Gmax 40 — — dB Receiver amplifier/OGM amplifier voltage gain Gre Vin = –33 dBV 18 20 22 dB Receiver amplifier/OGM amplifier output THDre Vin = –33 dBV 0.4 1.5 % distortion Operational amplifier voltage gain Gop Vin = –13 dBV 8 10 12 dB Operational amplifier output distortion THDop Vin = –13 dBV — 0.4 1.5 % DR amplifier output level Vodr Vin = –23 dBV, IN(8), OUT(32), sw(10) on –16.1 –13.6 –11.1 dBV DR amplifier output distortion THDdr Vin = –23 dBV, IN(8), OUT(32), sw(10) on 0.5 1.5 % Handset amplifier output level Vohd Vin = –16 dBV, IN(9), OUT(34), sw(0B) on –2 +0.5 +3 dBV Handset amplifier output distortion THDhd Vin = –16 dBV, IN(9), OUT(34), sw(0B) on — 0.55 1.5 % Handset amplifier attenuator level 1 Att1 address (51) 2.3 3 3.7 dB Handset amplifier attenuator level 2 Att2 address (52) 3.45 4.15 4.85 dB Handset amplifier attenuator level 3 Att3 address (53) 5.4 6.1 6.8 dB Electronic volume control output level Voevr Vin = –20 dBV, IN(9), OUT(28), sw(2D) on –22.9 –20.4 –17.9 dBV Electronic volume control step size Wevr Vin = –20 dBV, IN(9), OUT(28), sw(2D) on 2.9 3.8 4.6 dB Electronic volume control output noise voltage Noevr 20 to 20 kHz, OUT(28) — 25 60 µVrms [BTL Power Amplifier] Voltage gain Gpwr Vin = –20 dBV, RL = 16 Ω 18.2 19.7 21.2 dB Total harmonic distortion THDpw Vin = –30 dBV, RL = 16 Ω — 0.7 1.5 % Maximum BTL output power Pomax THD = 10 %, RL = 16 Ω 250 400 — mW Ripple rejection ratio SVRR Rg = 620 Ω, frin = 100 Hz, Vrin = –20 dBV, 40 50 — dB RL = 16 Ω Output noise voltage Nopw Rg = 620 Ω, 20 to 20 kHz, RL = 16 Ω — 20 60 µVrms [CPU Interface] Clock frequency Fck — — 500 kHz Input signal high level VH 3 — — V Input signal low level VL — — 1.5 V [VREF and Current Drain] Internal reference voltage (the pin 10 voltage) Vref 2.1 2.25 2.4 V Quiescent current 1 Icco1 With the BTL power amplifier on and the — 21 29 mA crosspoint switch off Quiescent current 2 Icco2 With the BTL power amplifier off and the — 14.5 21 mA crosspoint switch off Electrical Characteristics at Ta = 25°C, VCC = 5 V, fin = 1 kHz, RL = 10 kΩ |
Аналогичный номер детали - LA8520 |
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Аналогичное описание - LA8520 |
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