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LA8520 датащи(PDF) 2 Page - Sanyo Semicon Device

номер детали LA8520
подробное описание детали  Audio Signal-Processing IC with I/O Switching
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LA8520 датащи(HTML) 2 Page - Sanyo Semicon Device

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No. 6075-2/17
LA8520M
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Crosspoint switch voltage gain
Gsw
Vin = –13 dBV
–2.5
–0.5
1.5
dB
Crosspoint switch maximum input level
Vimax
THD = 1.5 %
–13
–7
dBV
Crosspoint switch output noise voltage
Nosw
20 to 20 kHz
15
60
µVrms
Microphone amplifier/TR amplifier voltage gain
Gmic
Vin = –53 dBV
38
40
42
dB
Microphone amplifier/TR output distortion
THDmc
Vin = –53 dBV
0.6
1.5
%
Microphone amplifier/TR equivalent input noise
Nimc
Rg = 620
Ω, 20 to 20 kHz
2.5
7.5
µVrms
voltage
Microphone amplifier/TR maximum voltage gain
Gmax
40
dB
Receiver amplifier/OGM amplifier voltage gain
Gre
Vin = –33 dBV
18
20
22
dB
Receiver amplifier/OGM amplifier output
THDre
Vin = –33 dBV
0.4
1.5
%
distortion
Operational amplifier voltage gain
Gop
Vin = –13 dBV
8
10
12
dB
Operational amplifier output distortion
THDop
Vin = –13 dBV
0.4
1.5
%
DR amplifier output level
Vodr
Vin = –23 dBV, IN(8), OUT(32), sw(10) on
–16.1
–13.6
–11.1
dBV
DR amplifier output distortion
THDdr
Vin = –23 dBV, IN(8), OUT(32), sw(10) on
0.5
1.5
%
Handset amplifier output level
Vohd
Vin = –16 dBV, IN(9), OUT(34), sw(0B) on
–2
+0.5
+3
dBV
Handset amplifier output distortion
THDhd
Vin = –16 dBV, IN(9), OUT(34), sw(0B) on
0.55
1.5
%
Handset amplifier attenuator level 1
Att1
address (51)
2.3
3
3.7
dB
Handset amplifier attenuator level 2
Att2
address (52)
3.45
4.15
4.85
dB
Handset amplifier attenuator level 3
Att3
address (53)
5.4
6.1
6.8
dB
Electronic volume control output level
Voevr
Vin = –20 dBV, IN(9), OUT(28), sw(2D) on
–22.9
–20.4
–17.9
dBV
Electronic volume control step size
Wevr
Vin = –20 dBV, IN(9), OUT(28), sw(2D) on
2.9
3.8
4.6
dB
Electronic volume control output noise voltage
Noevr
20 to 20 kHz, OUT(28)
25
60
µVrms
[BTL Power Amplifier]
Voltage gain
Gpwr
Vin = –20 dBV, RL = 16 Ω
18.2
19.7
21.2
dB
Total harmonic distortion
THDpw
Vin = –30 dBV, RL = 16 Ω
0.7
1.5
%
Maximum BTL output power
Pomax
THD = 10 %, RL = 16 Ω
250
400
mW
Ripple rejection ratio
SVRR
Rg = 620
Ω, frin = 100 Hz, Vrin = –20 dBV,
40
50
dB
RL = 16 Ω
Output noise voltage
Nopw
Rg = 620
Ω, 20 to 20 kHz, RL = 16 Ω
20
60
µVrms
[CPU Interface]
Clock frequency
Fck
500
kHz
Input signal high level
VH
3
V
Input signal low level
VL
1.5
V
[VREF and Current Drain]
Internal reference voltage (the pin 10 voltage)
Vref
2.1
2.25
2.4
V
Quiescent current 1
Icco1
With the BTL power amplifier on and the
21
29
mA
crosspoint switch off
Quiescent current 2
Icco2
With the BTL power amplifier off and the
14.5
21
mA
crosspoint switch off
Electrical Characteristics at Ta = 25°C, VCC = 5 V, fin = 1 kHz, RL = 10 kΩ


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