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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BF1102R датащи(PDF) 8 Page - NXP Semiconductors |
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BF1102R датащи(HTML) 8 Page - NXP Semiconductors |
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8 / 16 page  2000 Apr 11 8 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R handbook, halfpage MGS370 102 10 1 10−1 10 102 103 f (MHz) yis (mS) bis gis Fig.15 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MCD970 10 f (MHz) 102 103 103 102 10 1 −103 −102 −10 −1 ϕrs (deg) ϕrs yrs (mS) yrs Fig.16 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MGS372 102 −ϕfs (deg) 102 1 10 10 1 10 102 103 f (MHz) |yfs| (mS) ϕfs |yfs| Fig.17 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage 10 10−1 1 MCD971 10 102 103 f (MHz) yos (mS) gos bos Fig.18 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. |
Аналогичный номер детали - BF1102R |
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Аналогичное описание - BF1102R |
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