STL70N4LLF5 datasheet(4/10 Pages) STMICROELECTRONICS

номер детали	STL70N4LLF5

подробное описание детали	N-channel 40 V, 0.0055 廓, 18 A, PowerFLAT??(6x5) STripFET??V Power MOSFET

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Electrical characteristics

STL70N4LLF5

4/10

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

40

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±22 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

1V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 9 A

VGS= 4.5 V, ID= 9 A

0.0055

TBD

0.0065

0.009

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

1800

270

40

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 18 A

VGS = 4.5 V

(see Figure 3)

13

TBD

nC

RG

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

TBD

Ω

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