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LS132_SOIC датащи(PDF) 1 Page - Micross Components |
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LS132_SOIC датащи(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES Direct Replacement for INTERSIL IT132 HIGH hFE @ LOW CURRENT ≥ 80 @ 10µA OUTPUT CAPACITANCE ≤ 2.0pF VBE tracking ≤ 20µV°C ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation (One side) 250mW Continuous Power Dissipation (Both sides) 500mW Linear Derating factor (One side) 2.3mW/°C Linear Derating factor (Both sides) 4.3mW/°C Maximum Currents Collector Current 10mA MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VBE1 – VBE2 | Base Emitter Voltage Differential ‐‐ ‐‐ 5 mV IC = 10µA, VCE = 5V ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature ‐‐ ‐‐ 20 µV/°C IC = 10µA, VCE = 5V TA = ‐55°C to +125°C |IB1 – IB2 | Base Current Differential ‐‐ ‐‐ 25 nA IC = 10µA, VCE = 5V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVCBO Collector to Base Voltage 45 ‐‐ ‐‐ V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage 45 ‐‐ ‐‐ V IC = 10µA, IB = 0 BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V IE = 10µA, IC = 0 2 BVCCO Collector to Collector Voltage 60 ‐‐ ‐‐ V IC = 10µA, IE = 0 hFE DC Current Gain 80 ‐‐ ‐‐ IC = 10µA, VCE = 5V 100 ‐‐ ‐‐ IC = 1.0mA, VCE = 5V VCE(SAT) Collector Saturation Voltage ‐‐ ‐‐ 0.5 V IC = 0.5mA, IB = 0.05mA IEBO Emitter Cutoff Current ‐‐ ‐‐ 1 nA IC = 0, VEB = 3V ICBO Collector Cutoff Current ‐‐ ‐‐ 1 nA IE = 0, VCB = 45V COBO Output Capacitance ‐‐ ‐‐ 2 pF IE = 0, VCB = 5V CC1C2 Collector to Collector Capacitance ‐‐ ‐‐ 4 pF VCC = 0V IC1C2 Collector to Collector Leakage Current ‐‐ ‐‐ 10 nA VCC = ±60V fT Current Gain Bandwidth Product 110 ‐‐ ‐‐ MHz IC = 1mA, VCE = 5V NF Narrow Band Noise Figure ‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. LS132 MONOLITHIC DUAL PNP TRANSISTOR LS132 Features: High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance The LS132 is a monolithic pair of PNP transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS132 is a direct replacement for discontinued Intersil IT132. The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Linear Systems replaces discontinued Intersil IT132 Available Packages: LS132 in SOIC LS132 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx SOIC (Top View) |
Аналогичный номер детали - LS132_SOIC |
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Аналогичное описание - LS132_SOIC |
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