поискавой системы для электроныых деталей |
|
LS844_TO-78 датащи(PDF) 1 Page - Micross Components |
|
LS844_TO-78 датащи(HTML) 1 Page - Micross Components |
|
1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES LOW DRIFT | V GS1‐2 / T| ≤10µV/°C LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2| ≤5mV ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. TEMPERATURE 10 µV/°C VDG=10V, ID=500µA TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 5 mV VDG=10V, ID=500µA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 60 ‐‐ ‐‐ V VDS = 0 ID=1nA BVGGO Gate‐To‐Gate Breakdown 60 ‐‐ ‐‐ V I G= 1nA ID= 0 IS= 0 YfSS TRANSCONDUCTANCE Full Conduction 1500 ‐‐ ‐‐ µmho VDG= 15V VGS= 0V f = 1kHz YfS Typical Operation 1000 1500 ‐‐ µmho VDG= 15V ID= 500µA |YFS1‐2 / Y FS| Mismatch ‐‐ 0.6 3 % IDSS DRAIN CURRENT Full Conduction 1.5 5 15 mA VDG= 15V VGS= 0V |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ 1 5 % VGS(off) or Vp GATE VOLTAGE Pinchoff voltage 1 ‐‐ 3.5 V VDS= 15V ID= 1nA VGS(on) Operating Range 0.5 ‐‐ 3.5 V VDS=15V ID=500µA ‐IGmax. GATE CURRENT Operating ‐‐ 15 50 pA VDG= 15V ID= 500µA ‐IGmax. High Temperature ‐‐ ‐‐ 50 nA TA= +125°C ‐IGmax. Reduced VDG ‐‐ 5 30 pA VDG = 3V ID= 500µA ‐IGSSmax. At Full Conduction ‐‐ ‐‐ 100 pA VDG= 15V , VDS =0 YOSS OUTPUT CONDUCTANCE Full Conduction ‐‐ ‐‐ 20 µmho VDG= 15V VGS= 0V YOS Operating ‐‐ 0.2 2 µmho VDG= 15V ID= 500µA |YOS1‐2| Differential ‐‐ 0.02 0.2 µmho CMR COMMON MODE REJECTION ‐20 log | V GS1‐2/ V DS| 90 110 ‐‐ dB ∆VDS = 10 to 20V ID=500µA ‐20 log | V GS1‐2/ V DS| ‐‐ 85 ‐‐ ∆VDS = 5 to 10V ID=500µA NF NOISE Figure ‐‐ ‐‐ 0.5 dB VDS= 15V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz en Voltage ‐‐ ‐‐ 7 nV/√Hz VDS=15V ID=500µA f=1KHz NBW=1Hz ‐‐ ‐‐ 11 VDS=15V ID=500µA f=10Hz NBW=1Hz CISS CAPACITANCE Input ‐‐ ‐‐ 8 pF VDS= 15V, ID=500µA VDG= 15V, ID=500µA CRSS Reverse Transfer ‐‐ ‐‐ 3 CDD Drain‐to‐Drain ‐‐ 0.5 ‐‐ LS844 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET LS844 Applications: Wideband Differential Amps High-Speed,Temp-Compensated Single- Ended Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. The LS844 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS844 features a 5- mV offset and 10-µV/°C drift. The hermetically sealed TO-71 & TO-78 packages are well suited for military and harsh environment applications. (See Packaging Information). Available Packages: LS844 / LS844 in TO-71 & TO-78 LS844 / LS844 available as bare die Please contact Micross for full package and die dimensions Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution TO-71 & TO-78 (Top View) |
Аналогичный номер детали - LS844_TO-78 |
|
Аналогичное описание - LS844_TO-78 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |