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LS3250B_TO-71 датащи(PDF) 1 Page - Micross Components |
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LS3250B_TO-71 датащи(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES TIGHT MATCHING ≤ 5mV THERMAL TRACKING ≤ 5µV / °C ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation TBD Maximum Currents Collector Current 50mA Maximum Voltages Collector to Collector Voltage 80V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VBE1 – VBE2 | Base Emitter Voltage Differential ‐‐ ‐‐ 5 mV IC = 10mA, VCE = 5V ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature ‐‐ ‐ 5 µV/°C IC = 10µA, VCE = 5V TA = ‐40°C to +85°C |IB1 – IB2 | Base Current Differential ‐‐ ‐‐ 10 nA IC = 10µA, VCE = 5V |∆ (IB1 – IB2)|/ ∆T Base Current Differential Change with Temperature ‐‐ ‐‐ 0.5 nA/°C IC = 10µA, VCE = 5V TA = ‐40°C to +85°C hFE1 /hFE2 DC Current Gain Differential ‐‐ ‐‐ 10 % IC = 10µA, VCE = 5V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVCBO Collector to Base Voltage 40 ‐‐ ‐‐ V IC = 10mA, IE = 0 BVCEO Collector to Emitter Voltage 40 ‐‐ ‐‐ V IC = 10µA, IB = 0 BVEBO 2 Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V IE = 10µA, IC = 0 BVCCO Collector to Collector Voltage 80 ‐‐ ‐‐ V IC = 10µA, IE = 0 hFE DC Current Gain 100 ‐‐ ‐‐ IC = 10µA, VCE = 5V 80 ‐‐ ‐‐ IC = 100µA, VCE = 5V 80 ‐‐ ‐‐ IC = 1mA, VCE = 5V VCE(SAT) Collector Saturation Voltage ‐‐ ‐‐ 0.25 V IC = 100mA, IB = 10mA IEBO Emitter Cutoff Current ‐‐ ‐‐ 0.2 nA IC = 0A, VCB = 3V ICBO Collector Cutoff Current ‐‐ ‐‐ 0.2 nA IE = 0A, VCB = 20V COBO Output Capacitance ‐‐ ‐‐ 2 pF IE = 0A, VCB = 10V IC1C2 Collector to Collector Leakage Current ‐‐ ‐‐ 1 nA VCC = ±80V fT Current Gain Bandwidth Product ‐‐ ‐‐ 600 MHz IC = 1mA, VCE = 5V NF Narrow Band Noise Figure ‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. LS3250B MONOLITHIC DUAL NPN TRANSISTOR LS3250B Features: Tight matching Low Output Capacitance The LS3250B is a monolithic pair of NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications. The hermetically sealed TO-71 is well suited for hi-rel and harsh environment applications. (See Packaging Information). Linear Systems Log Conformance Monolithic Dual NPN Available Packages: LS3250B in TO-71 LS3250B available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx TO-71 (Bottom View) |
Аналогичный номер детали - LS3250B_TO-71 |
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Аналогичное описание - LS3250B_TO-71 |
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