2N3904_02 datasheet(1/4 Pages) KEC

номер детали	2N3904

подробное описание детали	EPITAXIAL PLANAR NPN TRANSISTOR

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2002. 9. 12

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SEMICONDUCTOR

TECHNICAL DATA

2N3904

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Low Leakage Current

: ICEX=50nA(Max.), IBL=50nA(Max.)

@VCE=30V, VEB=3V.

Excellent DC Current Gain Linearity.

Low Saturation Voltage

: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

Low Collector Output Capacitance

: Cob=4pF(Max.) @VCB=5V.

Complementary to 2N3906.

MAXIMUM RATING (Ta=25

)

TO-92

DIM MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2 3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. EMITTER

3. COLLECTOR

2. BASE

+_

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

200

mA

Base Current

IB

50

mA

Collector Power

Dissipation

Ta=25

PC

625

mW

Tc=25

1.5

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

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