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FMI16N50ES датащи(PDF) 1 Page - Fuji Electric

номер детали FMI16N50ES
подробное описание детали  N-CHANNEL SILICON POWER MOSFET
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производитель  FUJI [Fuji Electric]
домашняя страница  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FMI16N50ES датащи(HTML) 1 Page - Fuji Electric

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FMI16N50ES
FUJI POWER MOSFET
Super FAP-E3S series
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
Drain-Source Voltage
VDS
500
V
VDSX
500
V
VGS = -30V
Continuous Drain Current
ID
±16
A
Pulsed Drain Current
IDP
±64
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
16
A
Note*1
Non-Repetitive Maximum Avalanche Energy
EAS
485
mJ
Note*2
Repetitive Maximum Avalanche Energy
EAR
22.5
mJ
Note*3
Peak Diode Recovery dV/dt
dV/dt
4.8
kV/µs
Note*4
Peak Diode Recovery -di/dt
-di/dt
100
A/µs
Note*5
Maximum Power Dissipation
PD
2.02
W
Ta=25°C
225
Tc=25°C
Operating and Storage Temperature range
Tch
150
°C
Tstg
-55 to + 150
°C
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
500
-
-
V
Gate Threshold Voltage
VGS (th)
ID=250µA, VDS=VGS
3.7
4.2
4.7
V
Zero Gate Voltage Drain Current
IDSS
VDS=500V, VGS=0V
Tch=25°C
-
-
25
µA
VDS=400V, VGS=0V
Tch=125°C
-
-
250
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
-
10
100
nA
Drain-Source On-State Resistance
RDS (on)
ID=8A, VGS=10V
-
0.33
0.38
Forward Transconductance
gfs
ID=8A, VDS=25V
5.5
11
-
S
Input Capacitance
Ciss
VDS=25V
VGS=0V
f=1MHz
-
1700
2550
pF
Output Capacitance
Coss
-
210
315
Reverse Transfer Capacitance
Crss
-
13
19.5
Turn-On Time
td(on)
Vcc=300V
VGS=10V
ID=8A
RGS=18Ω
-
37
55.5
ns
tr
-
30
45
Turn-Off Time
td(off)
-
87
130.5
tf
-
17
25.5
Total Gate Charge
QG
Vcc=250V
ID=16A
VGS=10V
-
48
72
nC
Gate-Source Charge
QGS
-
17
25.5
Gate-Drain Charge
QGD
-
18
27
Gate-Drain Crossover Charge
QSW
-
7
10.5
Avalanche Capability
IAV
L=1.52mH, Tch=25°C
16
-
-
A
Diode Forward On-Voltage
VSD
IF=16A, VGS=0V, Tch=25°C
-
0.90
1.35
V
Reverse Recovery Time
trr
IF=16A, VGS=0V
-di/dt=100A/µs, Tch=25°C
-
0.46
-
µs
Reverse Recovery Charge
Qrr
-
6.0
-
µC
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS=7A, L=18.1mH, Vcc=50V, RG=50Ω.
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Thermal Characteristics
Description
Symbol
Test Conditions
min.
typ.
max.
Unit
Thermal resistance
Rth (ch-c)
Channel to Case
0.560
°C/W
Rth (ch-a)
Channel to Ambient
75.0
°C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=4.8kV/μs, Vcc≤BVDSS, Tch≤150°C.
T-Pack (L)


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