MJ11012G datasheet(2/4 Pages) ONSEMI

номер детали	MJ11012G

подробное описание детали	High-Current Complementary Silicon Transistors

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MJ11015 (PNP); MJ11012, MJ11016 (NPN)

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Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈ 8.0 k

≈ 40

PNP

MJ11015

BASE

EMITTER

COLLECTOR

≈ 8.0 k

≈ 40

NPN

MJ11012

MJ11016

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage(1)

(IC = 100 mAdc, IB = 0)

MJ11012

MJ11015, MJ11016

V(BR)CEO

60

120

−

Vdc

Collector−Emitter Leakage Current

(VCE = 60 Vdc, RBE = 1k ohm)

MJ11012

(VCE = 120 Vdc, RBE = 1k ohm)

MJ11015, MJ11016

(VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C)

MJ11012

(VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C)

MJ11015, MJ11016

ICER

−

1

5

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

5

mAdc

Collector−Emitter Leakage Current

(VCE = 50 Vdc, IB = 0)

ICEO

−

1

mAdc

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 20 Adc,VCE = 5 Vdc)

(IC = 30 Adc, VCE = 5 Vdc)

hFE

1000

200

−

Collector−Emitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

(IC = 30 Adc, IB = 300 mAdc)

VCE(sat)

−

3

4

Vdc

Base−Emitter Saturation Voltage

(IC = 20 A, IB = 200 mAdc)

(IC = 30 A, IB = 300 mAdc)

VBE(sat)

−

3.5

5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product

(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)

hfe

4

−

MHz

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.

Аналогичный номер детали - MJ11012G

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	MJ11012	140Kb / 3P	POWER TRANSISTORS(30A,60-120V,200W)
Motorola, Inc	MJ11012	157Kb / 4P	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
ON Semiconductor	MJ11012	157Kb / 4P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 1
Wing Shing Computer Com...	MJ11012	19Kb / 1P	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
Central Semiconductor C...	MJ11012	54Kb / 1P	Power Transistors

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Аналогичное описание - MJ11012G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MJ11012	68Kb / 4P	High-Current Complementary Silicon Transistors May, 2001 ??Rev. 4
NTE Electronics	NTE2534	22Kb / 2P	Silicon Complementary Transistors High Current Switch
NTE Electronics	NTE2513	22Kb / 2P	Silicon Complementary Transistors High Current Switch
New Jersey Semi-Conduct...	2N5684	206Kb / 2P	HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	MJ11028	121Kb / 4P	High-Current Complementary Silicon Power Transistors September, 2008 ??Rev. 6
NTE Electronics	NTE2570	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2515	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2524	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2562	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2564	22Kb / 2P	Complementary Silicon Transistors High Current Switch

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