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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC847BLP4 датащи(PDF) 2 Page - Diodes Incorporated |
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BC847BLP4 датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  BC847BLP4 Document number: DS31297 Rev. 6 - 2 2 of 5 www.diodes.com February 2011 © Diodes Incorporated BC847BLP4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 250 mW Thermal Resistance, Junction to Ambient (Note 4) RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage BVCEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 1μA, IC = 0 DC Current Gain hFE 200 350 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(sat) — 80 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(sat) — — 700 900 — — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(on) 580 — 640 725 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3.0 — pF VCB = 10V, f = 1.0MHz Notes: 4. Device mounted on FR-4 PCB. 5. Short duration pulse test used to minimize self-heating effect. |
Аналогичный номер детали - BC847BLP4_11 |
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Аналогичное описание - BC847BLP4_11 |
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