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REV. A

○ ELECTRICAL CHARACTERISTICS

（Unless otherwise specified,Ta=25℃ VCC=5V VIN=3.3V Ven=3V）

PARAMETER

SYMBOL

LIMIT

UNIT

CONDITIONS

MIN

TYP

MAX

Bias Current

ICC

-

0.85

1.7

mA

Shut Down Mode Current

IST

-

0

10

uA

Ven=0V

Output Voltage 1

Vo1

1.485

1.500

1.515

V

Io=50mA

Output Voltage 2

Vo2

1.470

1.500

1.530

V

Vcc=4.5V to 5.5V ,

Ta=-10℃ to 100℃(※)

Line Regulation

Reg.l

-

0.1

0.5

%/V

VCC=4.5V to 5.5V

Load Regulation

Reg.L

-

0.5

10

mV

Io=0 to 3A

[Enable]

High Level Enable Input

Voltage

Enhi

2

-

Vcc

V

Low Level Enable Input

Voltage

Enlow

-0.3

-

0.8

V

Enable pin Input Current

Ien

-

7

10

uA

Ven=3V

[Source Voltage]

VS Input Bias Current

ISBIAS

-

1.2

2.4

mA

VS Standby Current

ISSTB

150

-

-

mA

VS=1V Ven=0V

[Output MOSFET Driver]

MOSFET Driver Source

Current

IGSO

2

3

4

mA

VFB=1.4V,VGATE=2.5V

MOSFET Driver Sink Current

IGSI

2

3

4

mA

VFB=1.6V,VGATE=2.5V

[UVLO]

VCC UVLO

VccUVLO

4.20

4.35

4.50

V

Vcc:Sweep up

VCC UVLO Hysterisis

Vcchys

100

160

220

mV

Vcc:Sweep down

VD UVLO

VDUVLO

Vo×0.6

Vo×0.7

Vo×0.8

V

VD:Sweep up

[Drain Voltage Sensing]

VD Input bias Current

Ivd

7

13

19

uA

VD=3.3V

[NRCS/SCP]

NRCS Charge Current

Inrcs

14

20

26

uA

VNRCS=0.5V

SCP Charge Current

Iscpch

14

20

26

uA

VNRCS=0.5V

SCP Discharge Current

IscpDi

0.3

-

-

mA

VNRCS=0.5V

SCP Threshold Voltage

Vscp

1.2

1.3

1.4

V

Short Detect Voltage

Voscp

Vo×0.3 Vo×0.35 Vo×0.4

V

NRCS Stand-by Voltage

VSTB

-

-

50

mV

(※)

Design Guarantee