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ISL55210IRTZ-EVALZ датащи(PDF) 3 Page - Intersil Corporation

номер детали ISL55210IRTZ-EVALZ
подробное описание детали  Wideband, Low-Power, Ultra-High Dynamic Range
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL55210IRTZ-EVALZ датащи(HTML) 3 Page - Intersil Corporation

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ISL55210
3
FN7811.0
March 2, 2011
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage from VS+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VS+ +0.3V to GND-0.3V
Power Dissipation (See “Power Supply, Shutdown, and Thermal
Considerations” on page 13)
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . . . . . 3500V
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . . . . . . . . 250V
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Latch up (Per JESD-78; Class II; Level A) . . . . . . . . . . . . . . . . . . . . . . 100mA
Thermal Resistance (Typical)
θJA (°C/W)
θJC (°C/W)
16 Ld TQFN Package (Notes 4, 5) . . . . . . .
63
16.5
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +125°C
Maximum Continuous Operating Junction Temperature. . . . . . . . . . .+135°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Operating Temperature . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4.
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For
θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications VS+ = +3.3V Test Conditions: G = 12dB, VCM = open, VO = 2VP-P, RF = 200Ω, RL = 200Ω differential, TA = +25°C,
differential input, differential output, input and output referenced to internal default VCM (1.2V nominal) unless otherwise specified.
PARAMETER
CONDITIONS
MIN
(Note 6)
TYP
MAX
(Note 6)
UNIT
TESTED
(Note 7)
AC PERFORMANCE
Small-Signal Bandwidth (4-port S
parameter, Test Circuit #2)
G = 12dB, VO = 100mVP-P
2,200
MHz
G = 18dB, VO = 100mVP-P
700
MHz
G = 24dB, VO = 100mVP-P
300
MHz
Gain-Bandwidth Product
G = 18dB
4.0
GHz
Bandwidth for 0.1-dB Flatness
G = 12dB, VO = 100mVP-P
200
MHz
Large-Signal Bandwidth
G = 12dB, VO = 2VP-P
1.2
GHz
Slew Rate (Differential)
5,600
V/µs
Differential Rise/Fall Time
2-V step
0.17
ns
2nd-order Harmonic Distortion
f = 20MHz, VO = 2VP-P
-105
dBc
f = 50MHz, VO = 2VP-P
-88
dBc
f = 100MHz, VO = 2VP-P
-72
dBc
3rd-order Harmonic Distortion
f = 20MHz, VO = 2VP-P
-120
dBc
f = 50MHz, VO = 2VP-P
-107
dBc
f = 100MHz, VO = 2VP-P
-95
dBc
2nd-order Intermodulation Distortion
fc = 70MHz, 200kHz spacing (2VP-P envelope)
-80
dBc
fc = 140MHz, 200kHz spacing (2VP-P envelope)
-68
dBc
3rd-order Intermodulation Distortion
fc = 70MHz, 200kHz spacing (2VP-P envelope)
-102
dBc
fc = 140MHz, 200kHz spacing (2VP-P envelope)
-94
dBc
Input Voltage Noise
f > 1MHz, Differential
0.85
nV/√HZ
Input Current Noise
f > 1MHz, Each Input
5.0
pA/√HZ


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