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IRF450 датащи(PDF) 1 Page - Seme LAB |
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IRF450 датащи(HTML) 1 Page - Seme LAB |
1 / 3 page N-CHANNEL POWER MOSFET Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab L Semelab L Semelab L Semelab Limited imited imited imited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9118 Issue 1 Page 1 of 3 IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated) VDS Drain – Source Voltage 500V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C 13A ID Continuous Drain Current Tc = 100°C 8A IDM Pulsed Drain Current (2) 52A PD Total Power Dissipation at Tc = 25°C 150W Derate Above 25°C 1.2W/°C TJ Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 0.83 RθJA Thermal Resistance, Junction To Ambient 30 °C/W INTERNAL PACKAGE INDUCTANCE Symbols Parameters Typ. Units LD Internal Drain Inductance 5 LS Internal Source Inductance 13 nH Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) Repetitive Rating: Pulse Width limited by max. junction temperature. |
Аналогичный номер детали - IRF450_10 |
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Аналогичное описание - IRF450_10 |
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