FM24C04B-GTR datasheet(7/12 Pages) RAMTRON

номер детали	FM24C04B-GTR

подробное описание детали	4Kb Serial 5V F-RAM Memory

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производитель	RAMTRON [Ramtron International Corporation]

домашняя страница	http://www.ramtron.com

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FM24C04B

Rev. 1.3

Feb. 2011

Page 7 of 12

Figure 7. Current Address Read

Figure 8. Sequential Read

Figure 9. Selective (Random) Read

Endurance

The FM24C04B internally operates with a read and

restore mechanism. Therefore, endurance cycles are

applied for each read or write cycle. The memory

architecture is based on an array of rows and

columns. Each read or write access causes an

endurance cycle for an entire row. In the FM24C04B,

a row is 64 bits wide. Every 8-byte boundary marks

the beginning of a new row. Endurance can be

optimized by ensuring frequently accessed data is

located in different rows. Regardless, F-RAM read

and write endurance is effectively unlimited at the

1MHz two-wire speed. Even at 3000 accesses per

second to the same row, 10 years time will elapse

before 1 trillion endurance cycles occur.

Аналогичный номер детали - FM24C04B-GTR

производитель	номер детали	датащи	подробное описание детали
Ramtron International C...	FM25040B	313Kb / 13P	4Kb Serial 5V F-RAM Memory
Cypress Semiconductor	FM25040B	449Kb / 13P	4Kb Serial 5V F-RAM Memory
Cypress Semiconductor	FM24C04B	324Kb / 13P	4Kb Serial 5V F-RAM Memory
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Cypress Semiconductor	FM24C04B	335Kb / 12P	4Kb Serial 5V F-RAM Memory
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