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LA6581CL датащи(PDF) 2 Page - Sanyo Semicon Device |
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LA6581CL датащи(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page LA6581CL No.A0706-2/5 Specifications Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Output voltage VCC max 18 V IOUT max *1 0.36 A Output current IOUT max T < 200ms 0.50 A Output withstand voltage VOUT max 18 V FG output withstand VFG max 18 V FG output current IFG max 5mA Allowable power dissipation Pd max Mounted on a specified board *2 450 mW Operating temperature Topr -30 to +100 °C Storage temperature Tstg -55 to +150 °C *1: This specifies the starting current. Tj = 150°C max must not be exceeded. *2: Specified board: 20.0mm × 10.1mm × 0.8mm, Paper phenol. Recommended Operating Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage VCC 2.2 to 16 V Common-phase input voltage range of Hall input VICM 0.3 to VCC-1.5 V Electrical Characteristics at Ta = 25°C, VCC = 12.0V, unless especially specified. Ratings Parameter Symbol Conditions min typ max Unit Circuit current ICC IN- = 5.8V, IN+ = 6.0V, RL = ∞ 14 19 mA OUT output low voltage VOL IO = 100mA 0.1 0.2 V OUT output high voltage VOH IO = 100mA 0.1 0.2 V Hall bias voltage VHB IHB = 5mA 1.85 1.95 2.05 V Hall amplifier gain Vg 52 55 58 dB Hall amplifier input current VINR -10 -2 10 µA Input offset voltage VOFST 3 6 mV FG output low voltage VFG IFG = 3mA 0.2 0.3 V FG output leakage current IFGL VFG = 7V 30 µA Thermal protection circuit Th * Design guarantee 150 180 200 °C * Design guarantee : Design target. Measurement with a single unit not made. Truth Table IN- IN+ OUT1 OUT2 FG Mode H L H L L L H L H off During rotation - - off off - During overheat protection |
Аналогичный номер детали - LA6581CL_09 |
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Аналогичное описание - LA6581CL_09 |
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