2SC3590 datasheet(2/2 Pages) ISC

номер детали	2SC3590

подробное описание детали	isc Silicon NPN Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2SC3590

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

330

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA; RBE= ∞

150

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1m A; IC= 0

6

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

B

0.8

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

B

1.5

V

ICBO

Collector Cutoff Current

VCB= 180V; IE= 0

100

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

100

μA

hFE-1

DC Current Gain

IC= 1A; VCE= 1V

15

hFE-2

DC Current Gain

IC= 5A; VCE= 1V

10

50

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

40

MHz

tf

Fall Time

IC= 5A, IB1= -IB2= 0.5A

0.3

μs

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