BD132 datasheet(2/3 Pages) ISC

номер детали	BD132

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

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Inchange Semiconductor

Product Specification

2

Silicon PNP Power Transistors

BD132

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEsat-1

Collector-emitter saturation voltage

IC=-0.5A; IB=-50mA

-0.3

V

VCEsat-2

Collector-emitter saturation voltage

IC=-2A; IB=-0.2A

-0.7

V

VBEsat-1

Base-emitter saturation voltage

IC=-0.5A; IB=-50mA

-1.2

V

VBEsat-2

Base-emitter saturation voltage

IC=-2A; IB=-0.2A

-1.5

V

VCB=-50V; IE=0

-50

nA

ICBO

Collector cut-off current

VCB=-50V; IE=0 Tj=150℃

-10

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-50

nA

hFE-1

DC current gain

IC=-0.5A ; VCE=-12V

40

hFE-2

DC current gain

IC=-2A ; VCE=-1V

20

fT

Transition frequency

IC=-0.25A; VCE=-5V ;f=100MHz

60

MHz

Аналогичный номер детали - BD132

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BD132	71Kb / 8P	PNP power transistor 1997 Mar 04
Savantic, Inc.	BD132	109Kb / 3P	Silicon PNP Power Transistors
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