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GSOT05CL-V датащит (PDF) 3 Page - Vishay Siliconix

№ деталь GSOT05CL-V
подробность  Two-Line ESD-Protection in SOT-23
скачать  6 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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GSOT05CL-V Datasheet(HTML) 3 Page - Vishay Siliconix

   
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Document Number: 85182
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 1.2, 01-Jul-10
3
GSOT05CL-V
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
BiSY-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOT05CL-V can also be used as a single line protection device.
Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be
connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOT05CL-V
passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the
breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series
impedances (resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOT05CL-V voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 W/150 pF)
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
L1
20361
Ground
BiSy
ELECTRICAL CHARACTERISTICS GSOT05CL-V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 1 μA
VRWM
6-
-
V
Reverse current
at VR = 6 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
6.5
7.5
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-8
10
V
at IPP = IPPM = 13 A
-
12.6
15
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-50
60
pF
at VR = 2.5 V; f = 1 MHz
-
37
-
pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010
20
30
40
Time (µs)
20 µs to 50 %
8 µs to 100 %
20548


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