GT100LA120UX datasheet(1/10 Pages) VISHAY

номер детали	GT100LA120UX

подробное описание детали	"Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A

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"Low Side Chopper" IGBT SOT-227

(Trench IGBT), 100 A

GT100LA120UX

Vishay Semiconductors

Document Number: 93099

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 22-Jul-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

1

FEATURES

• Trench IGBT technology

• Very low VCE(on)

• Square RBSOA

•HEXFRED® clamping diode

• 10 μs short circuit capability

• Fully isolated package

• Speed 4 kHz to 30 kHz

• Very low internal inductance (

 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

BENEFITS

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

PRODUCT SUMMARY

VCES

1200 V

IC DC

100 A at 71 °C

VCE(on) typical at 100 A, 25 °C

2.36 V

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

VCES

1200

V

Continuous collector current

IC

TC = 25 °C

134

A

TC = 80 °C

92

Pulsed collector current

ICM

270

Clamped inductive load current

ILM

270

Diode continuous forward current

IF

TC = 25 °C

87

TC = 80 °C

59

Gate to emitter voltage

VGE

± 20

V

Power dissipation, IGBT

PD

TC = 25 °C

463

W

TC = 80 °C

260

Power dissipation, diode

PD

TC = 25 °C

338

TC = 80 °C

190

RMS isolation voltage

VISOL

Any terminal to case, t = 1 min

2500

V

Аналогичный номер детали - GT100LA120UX

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	GT100DA120U	177Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Revision: 22-Jul-10
	GT100DA120U	176Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12
	GT100DA60U	175Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Revision: 22-Jul-10
	GT100DA60U	178Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12
	GT100DA60U	178Kb / 10P	Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12

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