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WPB4002 датащит (PDF) 2 Page - Sanyo Semicon Device

№ деталь WPB4002
подробность  General-Purpose Switching Device Applications
скачать  5 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  http://www.ssdc-jp.com/eng/
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WPB4002 Datasheet(HTML) 2 Page - Sanyo Semicon Device

   
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WPB4002
No. A1769-2/5
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=480V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
35
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=11.5A
7.5
15
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=11.5A, VGS=10V
0.28
0.36
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
2200
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
400
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
83
pF
Turn-ON Delay Time
td(on)
See Fig.2
42
ns
Rise Time
tr
See Fig.2
130
ns
Turn-OFF Delay Time
td(off)
See Fig.2
234
ns
Fall Time
tf
See Fig.2
84
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=23A
84
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=23A
15.2
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=23A
45.4
nC
Diode Forward Voltage
VSD
IS=23A, VGS=0V
1.1
1.5
V
Reverse Recovery Time
trr
See Fig.3
ISD=23A, VGS=0V, di/dt=100A/μs
115
ns
Reverse Recovery Charge
Qrr
340
nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
Fig.3 trr Reverse Recovery Resistance Test Circuit
50Ω
≥50Ω
RG
VDD
L
10V
0V
WPB4002
G
S
D
P.G
RGS=50Ω
G
S
D
ID=11.5A
RL=17.3Ω
VDD=200V
VOUT
WPB4002
VIN
PW=10μs
D.C.≤0.5%
10V
0V
VIN
VDD=50V
WPB4002
500μH
Driver MOSFET
G
S
D


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