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IRF530S датащит (PDF) 7 Page - Vishay Siliconix

№ деталь IRF530S
подробность  Power MOSFET
скачать  9 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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IRF530S Datasheet(HTML) 7 Page - Vishay Siliconix

   
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Document Number: 91020
www.vishay.com
S11-1046-Rev. C, 30-May-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF530S, SiHF530S
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91020.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS = 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD waveform
D.U.T. V
DS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
• I
SD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS = 5 V for logic level devices
V
DD


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