BAS116 datasheet(1/4 Pages) SIEMENS

номер детали	BAS116

подробное описание детали	Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)

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Silicon Low Leakage Diode

BAS 116

Maximum Ratings

Type

Ordering Code

(tape and reel)

Marking

Package1)

Pin Configuration

BAS 116

Q62702-A919

JVs

SOT-23

Parameter

Symbol

Values

Unit

Reverse voltage

VR

75

V

Forward current

IF

250

mA

Junction temperature

Tj

150

˚C

Total power dissipation, TS =54˚C

Ptot

370

mW

Storage temperature range

Tstg

– 65 … + 150

Peak reverse voltage

VRM

85

Surge forward current,

t = 1 µs

IFS

4.5

A

Thermal Resistance

Junction - ambient2)

Rth JA

≤ 330

K/W

Junction - soldering point

Rth JS

≤ 260

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm

× 40 mm × 1.5 mm/6 cm2 Cu.

q

Low-leakage applications

q

Medium speed switching times

q

Single diode

5.91

Аналогичный номер детали - BAS116

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NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
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Аналогичное описание - BAS116

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Siemens Semiconductor G...	BAV170	98Kb / 4P	Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode)
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