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SIHLR014-GE3 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SIHLR014-GE3
подробное описание детали  Power MOSFET
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Document Number: 91321
2
S10-1139-Rev. C, 17-May-10
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
--
50
Maximum Junction-to-Case (Drain)
RthJC
--
5.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.073
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
μA
VDS = 48 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 5.0 V
ID = 4.6 Ab
-
-
0.20
Ω
VGS = 4.0 V
ID = 3.9 Ab
-
-
0.28
Forward Transconductance
gfs
VDS = 25 V, ID = 4.6 A
3.4
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
400
-
pF
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-42
-
Total Gate Charge
Qg
VGS = 5.0 V
ID = 10 A, VDS = 48 V,
see fig. 6 and 13b
--
8.4
nC
Gate-Source Charge
Qgs
--
3.5
Gate-Drain Charge
Qgd
--
6.0
Turn-On Delay Time
td(on)
VDD = 30 V, ID = 10 A,
Rg = 12 Ω, RD = 2.8 Ω, see fig. 10b
-9.3
-
ns
Rise Time
tr
-
110
-
Turn-Off Delay Time
td(off)
-17
-
Fall Time
tf
-26
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contactc
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
7.7
A
Pulsed Diode Forward Currenta
ISM
--
31
Body Diode Voltage
VSD
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
-
65
130
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.33
0.65
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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