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IRLZ44 датащи(PDF) 1 Page - Vishay Siliconix

номер детали IRLZ44
подробное описание детали  Power MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRLZ44 датащи(HTML) 1 Page - Vishay Siliconix

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Document Number: 91328
www.vishay.com
S11-0520-Rev. C, 21-Mar-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRLZ44, SiHLZ44
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25
Ω, IAS = 51 A (see fig. 12).
c. ISD
≤ 51 A, dV/dt ≤ 250 A/s, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (
Ω)VGS = 5.0 V
0.028
Qg (Max.) (nC)
66
Qgs (nC)
12
Qgd (nC)
43
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRLZ44PbF
SiHLZ44-E3
SnPb
IRLZ44
SiHLZ44
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Currente
VGS at 5.0 V
TC = 25 °C
ID
50
A
Continuous Drain Current
TC = 100 °C
36
Pulsed Drain Currenta
IDM
200
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
400
mJ
Maximum Power Dissipation
TC = 25 °C
PD
150
W
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)d
for 10 s
300
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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