поискавой системы для электроныых деталей |
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MJE802 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJE802 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A ·Complement to Type MJE702 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB B Base Current 0.1 A PC Collector Power Dissipation TC=25℃ 40 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc Website:www.iscsemi.cn |
Аналогичный номер детали - MJE802 |
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Аналогичное описание - MJE802 |
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