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SI1072X датащи(PDF) 2 Page - Vishay Siliconix |
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SI1072X датащи(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 73892 S10-2542-Rev. E, 08-Nov-10 Vishay Siliconix Si1072X Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 30.4 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 1.86 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 6 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 1.3 A 0.077 0.093 VGS = 4.5 V, ID = 1.2 A 0.107 0.129 Forward Transconductance gfs VDS = 15 V, ID = 1.3 A 15 mS Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 280 pF Output Capacitance Coss 55 Reverse Transfer Capacitance Crss 35 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 1.3 A 5.5 8.3 nC VDS = 15 V, VGS = 4.5 V, ID = 1.3 A 2.7 4.1 Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 0.8 Gate Resistance Rg f = 1 MHz 3.5 4.6 Turn-On Delay Time td(on) VDD = 15 V, RL = 13.6 ID 1.1 A, VGEN = 10 V, Rg = 1 711 ns Rise Time tr 12 18 Turn-Off DelayTime td(off) 12 18 Fall Time tf 69 Turn-On Delay Time td(on) VDD = 15 V, RL = 15.5 ID 0.97 A, VGEN = 10 V, Rg = 1 13 20 Rise Time tr 31 47 Turn-Off DelayTime td(off) 914 Fall Time tf 69 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 6A Body Diode Voltage VSD IS = 0.7 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.2 A, dI/dt = 100 A/µs 11.2 17 nC Body Diode Reverse Recovery Charge Qrr 4.5 6.8 ns Reverse Recovery Fall Time ta 7.5 Reverse Recovery Rise Time tb 3.7 |
Аналогичный номер детали - SI1072X_10 |
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Аналогичное описание - SI1072X_10 |
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