SI3586DV-T1-GE3 datasheet(2/13 Pages) VISHAY

номер детали	SI3586DV-T1-GE3

подробное описание детали	N- and P-Channel 20-V (D-S) MOSFET

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Document Number: 72310

S09-2110-Rev. D, 12-Oct-09

Vishay Siliconix

Si3586DV

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.40

1.1

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.40

- 1.1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

N-Ch

± 100

nA

VDS = 0 V, VGS = ± 8 V

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 85 °C

N-Ch

10

VDS = - 20 V, VGS = 0 V, TJ = 85 °C

P-Ch

- 10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

5

A

VDS ≤ - 5 V, VGS = - 4.5 V

P-Ch

- 5

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 3.4 A

N-Ch

0.047

0.060

Ω

VGS = - 4.5 V, ID = - 2.5 A

P-Ch

0.086

0.110

VGS = 2.5 V, ID = 3.2 A

N-Ch

0.054

0.070

VGS = - 2.5 V, ID = - 2.0 A

P-Ch

0.116

0.145

VGS = - 1.8 V, ID = - 2.5 A

N-Ch

0.075

0.100

VGS = - 1.8 V, ID = - 1.0 A

P-Ch

0.170

0.220

Forward Transconductancea

gfs

VDS = 5 V, ID = 3.4 A

N-Ch

13

S

VDS = - 5 V, ID = - 2.5 A

P-Ch

6

Diode Forward Voltagea

VSD

IS = 1.05 A, VGS = 0 V

N-Ch

0.8

1.1

V

IS = - 1.05 A, VGS = 0 V

P-Ch

- 0.8

- 1.1

Dynamicb

Total Gate Charge

Qg

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 3.4 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A

N-Ch

4.1

6.0

nC

P-Ch

5

7.5

Gate-Source Charge

Qgs

N-Ch

0.65

P-Ch

0.68

Gate-Drain Charge

Qgd

N-Ch

0.8

P-Ch

1.3

Gate Resistance

Rg

N-Ch

2.6

Ω

P-Ch

9.8

Turn-On Delay Time

td(on)

N-Channel

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

P-Channel

VDD = - 10 V, RL = 10 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω

N-Ch

30

45

ns

P-Ch

28

45

Rise Time

tr

N-Ch

52

85

P-Ch

55

85

Turn-Off Delay Time

td(off)

N-Ch

25

40

P-Ch

55

85

Fall Time

tf

N-Ch

20

30

P-Ch

32

50

Source-Drain Reverse Recovery Time

trr

IF = 1.05 A, dI/dt = 100 A/µs

N-Ch

25

40

IF = - 1.05 A, dI/dt = 100 A/µs

P-Ch

25

40

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производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3588DV	59Kb / 7P	N- and P-Channel 20-V (D-S) MOSFET Rev. A, 23-Oct-00
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SI3586DV-T1-GE3 датащи(PDF) 2 Page - Vishay Siliconix

SI3586DV-T1-GE3 датащи(HTML) 2 Page - Vishay Siliconix

Аналогичный номер детали - SI3586DV-T1-GE3

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