поискавой системы для электроныых деталей |
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SI4497DY-T1-GE3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI4497DY-T1-GE3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si4497DY New Product Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 www.vishay.com 1 P-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Adaptor Switch • High Current Load Switch • Notebook PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) - 30 0.0033 at VGS = - 10 V - 36 90 nC 0.0046 at VGS = - 4.5 V - 29 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 °C/W. d. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 36 A TC = 70 °C - 29 TA = 25 °C - 24.8a, b TA = 70 °C - 19.2a, b Pulsed Drain Current IDM - 70 Continuous Source-Drain Diode Current TC = 25 °C IS - 6.5 TA = 25 °C - 2.9a, b Avalanche Current L = 0.1 mH IAS - 30 Single-Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 7.8 W TC = 70 °C 5.0 TA = 25 °C 3.5a, b TA = 70 °C 2.2a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 29 35 °C/W Maximum Junction-to-Foot Steady State RthJF 13 16 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET |
Аналогичный номер детали - SI4497DY-T1-GE3 |
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Аналогичное описание - SI4497DY-T1-GE3 |
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