SI4497DY-T1-GE3 datasheet(1/7 Pages) VISHAY

номер детали	SI4497DY-T1-GE3

подробное описание детали	P-Channel 30 V (D-S) MOSFET

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Vishay Siliconix

Si4497DY

New Product

Document Number: 65748

S10-0639-Rev. A, 22-Mar-10

www.vishay.com

1

P-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Adaptor Switch

•

High Current Load Switch

•

Notebook

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

- 30

0.0033 at VGS = - 10 V

- 36

90 nC

0.0046 at VGS = - 4.5 V

- 29

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 80 °C/W.

d. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 36

A

TC = 70 °C

- 29

TA = 25 °C

- 24.8a, b

TA = 70 °C

- 19.2a, b

Pulsed Drain Current

IDM

- 70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 6.5

TA = 25 °C

- 2.9a, b

Avalanche Current

L = 0.1 mH

IAS

- 30

Single-Pulse Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

7.8

W

TC = 70 °C

5.0

TA = 25 °C

3.5a, b

TA = 70 °C

2.2a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

29

35

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

13

16

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

Аналогичный номер детали - SI4497DY-T1-GE3

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Аналогичное описание - SI4497DY-T1-GE3

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Аналогичный номер детали - SI4497DY-T1-GE3

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