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SI4618DY-T1-GE3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI4618DY-T1-GE3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 15 page Vishay Siliconix Si4618DY Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) Channel-1 30 0.017 at VGS = 10 V 8.0 12.5 0.0195 at VGS = 4.5 V 7.5 Channel-2 30 0.010 at VGS = 10 V 15.2 17 0.0115 at VGS = 4.5 V 14.1 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) a 30 0.43 V at 1.0 A 3.8 G1 D1 S2 S1/D2 S2 S1/D2 G2 S1/D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G2 S2 N-Channel 2 MOSFET Schottky Diode G1 N-Channel 1 MOSFET S1/D2 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2). ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ± 16 ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8.0 15.2 A TC = 70 °C 6.4 12.1 TA = 25 °C 6.7b, c 11.4b, c TA = 70 °C 5.4b, c 9.1b, c Pulsed Drain Current (10 µs Pulse Width) IDM 35 60 Source-Drain Current Diode Current TC = 25 °C IS 1.8 3.8 TA = 25 °C 1.25b, c 2.4b, c Pulsed Source-Drain Current ISM 35 35 Single Pulse Avalanche Current L = 0.1 mH IAS 15 15 Single Pulse Avalanche Energy EAS 11.2 11.2 mJ Maximum Power Dissipation TC = 25 °C PD 1.98 4.16 W TC = 70 °C 1.26 2.66 TA = 25 °C 1.38b, c 2.35b, c TA = 70 °C 0.88b, c 1.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 72 90 43 53 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 51 63 25 30 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook Logic dc-to-dc • Low Current dc-to-dc |
Аналогичный номер детали - SI4618DY-T1-GE3 |
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Аналогичное описание - SI4618DY-T1-GE3 |
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