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SI4816BDY-T1-E3 датащи(PDF) 3 Page - Vishay Siliconix

номер детали SI4816BDY-T1-E3
подробное описание детали  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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SI4816BDY-T1-E3 датащи(HTML) 3 Page - Vishay Siliconix

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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
www.vishay.com
3
Vishay Siliconix
Si4816BDY
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
VF
IF = 1.0 A
0.47
0.50
V
IF = 1.0 A, TJ = 125 °C
0.36
0.42
Maximum Reverse Leakage Current
Irm
VR = 30 V
0.004
0.100
mA
VR = 30 V, TJ = 100 °C
0.7
10
VR = - 30 V, TJ = 125 °C
3.0
20
Junction Capacitance
CT
VR = 10 V
50
pF
Output Characteristics
On-Resistance vs. Drain Current
0
5
10
15
20
25
30
35
40
0
1234
5
VGS = 10 thru 4 V
3 V
VDS – Drain-to-Source Voltage (V)
2 V
0.00
0.01
0.02
0.03
0.04
0.05
0
5
10
15
20
25
30
35
40
ID – Drain Current (A)
VGS = 4.5 V
VGS = 10 V
Transfer Characteristics
Capacitance
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TC = 125 °C
- 55 °C
25 °C
VGS – Gate-to-Source Voltage (V)
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
VDS – Drain-to-Source Voltage (V)
Crss
Coss
Ciss


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