поискавой системы для электроныых деталей |
|
SI5515CDC датащи(PDF) 1 Page - Vishay Siliconix |
|
SI5515CDC датащи(HTML) 1 Page - Vishay Siliconix |
1 / 16 page Vishay Siliconix Si5515CDC Document Number: 68747 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 1 N- and P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) N-Channel 20 0.036 at VGS = 4.5 V 4g 6.5 nC 0.041 at VGS = 2.5 V 4g 0.050 at VGS = 1.8 V 4g P-Channel - 20 0.100 at VGS = - 4.5 V - 4g 6.2 nC 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 Marking Code EH XXX Lot Traceability and Date Code Part # Code Bottom View 1.8 mm S 1 G 1 S 2 G 2 D 1 D 1 D 2 D 2 1 1206-8 ChipFET® Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free) Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel. g. Package limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4g - 4g A TC = 70 °C 4g - 3.8 TA = 25 °C 4b, c, g - 3.1b, c TA = 70 °C 4b, c, g - 2.5b, c Pulsed Drain Current IDM 20 - 10 Source Drain Current Diode Current TC = 25 °C IS 2.6 - 2.6 TA = 25 °C 1.7b, c - 1.7b, c Maximum Power Dissipation TC = 25 °C PD 3.1 3.1 W TC = 70 °C 2.0 2.0 TA = 25 °C 2.1b, c 1.3b, c TA = 70 °C 1.3b, c 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 50 60 77 95 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 33 40 |
Аналогичный номер детали - SI5515CDC_10 |
|
Аналогичное описание - SI5515CDC_10 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |