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SI5515CDC датащи(PDF) 1 Page - Vishay Siliconix

номер детали SI5515CDC
подробное описание детали  N- and P-Channel 20 V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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SI5515CDC датащи(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si5515CDC
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
1
N- and P-Channel 20 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Devices
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
N-Channel
20
0.036 at VGS = 4.5 V
4g
6.5 nC
0.041 at VGS = 2.5 V
4g
0.050 at VGS = 1.8 V
4g
P-Channel
- 20
0.100 at VGS = - 4.5 V
- 4g
6.2 nC
0.120 at VGS = - 2.5 V
- 4g
0.156 at VGS = - 1.8 V
- 3.8
Marking Code
EH
XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
1.8
mm
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
1206-8 ChipFET®
Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free)
Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4g
- 4g
A
TC = 70 °C
4g
- 3.8
TA = 25 °C
4b, c, g
- 3.1b, c
TA = 70 °C
4b, c, g
- 2.5b, c
Pulsed Drain Current
IDM
20
- 10
Source Drain Current Diode Current
TC = 25 °C
IS
2.6
- 2.6
TA = 25 °C
1.7b, c
- 1.7b, c
Maximum Power Dissipation
TC = 25 °C
PD
3.1
3.1
W
TC = 70 °C
2.0
2.0
TA = 25 °C
2.1b, c
1.3b, c
TA = 70 °C
1.3b, c
0.8b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
50
60
77
95
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
33
40


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