SI7288DP-T1-GE3 datasheet(5/13 Pages) VISHAY

номер детали	SI7288DP-T1-GE3

подробное описание детали	Dual N-Channel 40-V (D-S) MOSFET

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Document Number: 65366

S09-2113-Rev. A, 12-Oct-09

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Si7288DP

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

5

10

15

20

25

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Case

0

4

8

12

16

20

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

Аналогичный номер детали - SI7288DP-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7288DP-T1-GE3	340Kb / 13P	Dual N-Channel 40 V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SI7288DP-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4906DY-T1-E3	267Kb / 10P	Dual N-Channel 40-V (D-S) MOSFET Rev. C, 16-Nov-09
Vishay Siliconix	SI7938DP	513Kb / 13P	Dual N-Channel 40-V (D-S) MOSFET Rev. A, 28-Sep-09
Analog Power	AM7640N	77Kb / 3P	Dual N-Channel 40-V (D-S) MOSFET
	AM4940N	120Kb / 5P	Dual N-Channel 40-V (D-S) MOSFET
	AM4942N	180Kb / 3P	Dual N-Channel 40-V (D-S) MOSFET
VBsemi Electronics Co.,...	9960M	1,004Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET
	AO4884	1Mb / 9P	Dual N-Channel 40-V (D-S) MOSFET
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Leshan Radio Company	LDN4818T1G	327Kb / 3P	Dual N-Channel 40-V (D-S) MOSFET
VBsemi Electronics Co.,...	NTMD5836NLR2G	1,004Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET

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SI7288DP-T1-GE3 датащи(PDF) 5 Page - Vishay Siliconix

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Аналогичный номер детали - SI7288DP-T1-GE3

Аналогичное описание - SI7288DP-T1-GE3

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