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SI7852ADP-T1-E3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI7852ADP-T1-E3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7852ADP Document Number: 73988 S09-0223-Rev. C, 09-Feb-09 www.vishay.com 1 N-Channel 80-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Primary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 80 0.017 at VGS = 10 V 30 30.5 0.021 at VGS = 8 V 30 Ordering Information: Si7852ADP-T1-E3 (Lead (Pb)-free) Si7852ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View N-Channel MOSFET G D S Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 30a A TC = 70 °C 30a TA = 25 °C 12b, c TA = 70 °C 9.7b, c Pulsed Drain Current IDM 60 Continuous Source-Drain Diode Current TC = 25 °C IS 30a TA = 25 °C 4.5b, c Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 62.5 W TC = 70 °C 40 TA = 25 °C 5b, c TA = 70 °C 3.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 20 25 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.6 2.0 |
Аналогичный номер детали - SI7852ADP-T1-E3 |
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Аналогичное описание - SI7852ADP-T1-E3 |
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