SI7900AEDN-T1-GE3 datasheet(2/12 Pages) VISHAY

номер детали	SI7900AEDN-T1-GE3

подробное описание детали	Dual N-Channel 20-V (D-S) MOSFET, Common Drain

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Document Number: 72287

S-81544-Rev. C, 07-Jul-08

Vishay Siliconix

Si7900AEDN

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.40

0.9

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 1

µA

VDS = 0 V, VGS = ± 12 V

± 10

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 85 °C

20

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 8.5 A

0.020

0.026

Ω

VGS = 2.5 V, ID = 8 A

0.022

0.030

VGS = 1.8 V, ID = 7 A

0.026

0.036

Forward Transconductancea

gfs

VDS = 10 V, ID = 8.5 A

25

S

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.65

1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 6.5 A

10.5

16

nC

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

1.8

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

0.85

1.25

ns

Rise Time

tr

1.3

2.0

Turn-Off Delay Time

td(off)

8.6

13

Fall Time

tf

4.2

6.5

Gate-Current vs. Gate-Source Voltage

0

2

4

6

8

10

0

3

6

9

12

15

18

VGS - Gate-to-Source Voltage (V)

Gate Current vs. Gate-Source Voltage

0369

12

15

0.01

100

10 000

TJ = 25 °C

0.1

1

10

1000

VGS - Gate-to-Source Voltage (V)

TJ = 150 °C

Аналогичный номер детали - SI7900AEDN-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7900AEDN-T1-GE3	624Kb / 12P	Dual N-Channel 20 V (D-S) MOSFET, Common Drain 01-Jan-2022

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Аналогичное описание - SI7900AEDN-T1-GE3

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SI7900AEDN-T1-GE3 датащи(PDF) 2 Page - Vishay Siliconix

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Аналогичный номер детали - SI7900AEDN-T1-GE3

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