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SIA778DJ датащи(PDF) 1 Page - Vishay Siliconix

номер детали SIA778DJ
подробное описание детали  N-Channel 12 V and 20 V (D-S) MOSFETs
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIA778DJ датащи(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
SiA778DJ
New Product
Document Number: 65669
S10-0046-Rev. A, 11-Jan-10
www.vishay.com
1
N-Channel 12 V and 20 V (D-S) MOSFETs
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Typical ESD Performance for Channel 2: 2800 V
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
N-Channel Level Shift Load Switch for Portable Devices
- for 0 V to 8 V Power Lines
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (
www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A) Qg (Typ.)
Channel 1
12
0.029 at VGS = 4.5 V
4.5a
5.6 nC
0.034 at VGS = 2.5 V
4.5a
0.044 at VGS = 1.8 V
4.5a
0.065 at VGS = 1.5 V
4.5a
Channel 2
20
0.225 at VGS = - 4.5 V
1.5a
1.1 nC
0.270 at VGS = - 2.5 V
1.5a
0.345 at VGS = - 1.8 V
1.5a
0.960 at VGS = - 1.5 V
0.5a
Ordering Information: SiA778DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 1 MOSFET
G1
D1
S1
N-Channel 2 MOSFET
Marking Code
X X X
C G X
Lot Traceability
and Date Code
Part # code
S1
D1
G2
S2
G1
D2
1
6
5
4
2
3
2.05 mm
2.05 mm
PowerPAK SC-70-6 Dual
D1
D2
D2
S2
G2
200
Ω
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel 1
Channel 2
Unit
Drain-Source Voltage
VDS
12
20
V
Gate-Source Voltage
VGS
± 8
± 6
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4.5a
1.5a
A
TC = 70 °C
4.5a
1.5a
TA = 25 °C
4.5a, b, c
1.5b, c
TA = 70 °C
4.5a, b, c
1.5b, c
Pulsed Drain Current
IDM
20
4
Source Drain Current Diode Current
TC = 25 °C
IS
4.5a
1.5a
TA = 25 °C
1.6b, c
1.5b, c
Maximum Power Dissipation
TC = 25 °C
PD
6.5
5
W
TC = 70 °C
53.2
TA = 25 °C
1.9b, c
1.9b, c
TA = 70 °C
1.2b, c
1.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel 1
Channel 2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
52
65
52
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
12.5
16
20
25


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