SIA814DJ datasheet(1/12 Pages) VISHAY

номер детали	SIA814DJ

подробное описание детали	N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

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Vishay Siliconix

SiA814DJ

New Product

Document Number: 68672

S-81176-Rev. A, 26-May-08

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

FEATURES

•

Halogen-free

•

LITTLE FOOT®

Plus Schottky Power MOSFET

•

New Thermally Enhanced PowerPAK®

SC-70 Package

- Small Footprint Area

- Low On-Resistance

- Thin 0.75 mm profile

APPLICATIONS

•

DC/DC Converter for Portable Devices

• Load Switch for Portable Devices

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.061 at VGS = 10 V

4.5

3.2 nC

0.072 at VGS = 4.5 V

4.5

0.110 at VGS = 2.5 V

4.5

SCHOTTKY PRODUCT SUMMARY

VKA (V)

Vf (V)

Diode Forward Voltage

IF (A)

a

30

0.56 at 1 A

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (MOSFET)

VDS

30

V

Reverse Voltage (Schottky)

VKA

30

Gate-Source Voltage (MOSFET)

VGS

± 12

Continuous Drain Current (TJ = 150 °C) (MOSFET)

TC = 25 °C

ID

4.5a

A

TC = 70 °C

4.5a

TA = 25 °C

4.3b, c

TA = 70 °C

3.4b, c

Pulsed Drain Current (MOSFET)

IDM

15

Continuous Source-Drain Diode Current

(MOSFET Diode Conduction)

TC = 25 °C

IS

4.5a

TA = 25 °C

1.6b, c

Average Forward Current (Schottky)

IF

2b

Pulsed Forward Current (Schottky)

IFM

3

Maximum Power Dissipation (MOSFET)

TC = 25 °C

PD

6.5

W

TC = 70 °C

5

TA = 25 °C

1.9b, c

TA = 70 °C

1.2b, c

Maximum Power Dissipation (Schottky)

TC = 25 °C

6.8

TC = 70 °C

4.3

TA = 25 °C

1.6b, c

TA = 70 °C

1.0b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

Marking Code

X X X

G B X

Lot Traceability

and Date code

Part # code

K

A

N-Channel MOSFET

G

D

S

A

K

G

S

NC

D

1

6

5

4

2

3

2.05 mm

PowerPAK SC-70-6 Dual

K

D

0.75 mm

Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

RoHS

COMPLIANT

Аналогичный номер детали - SIA814DJ

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SIA810DJ	133Kb / 10P	N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode Rev. B, 03-Mar-08
	SIA811ADJ	282Kb / 12P	P-Channel 20-V (D-S) MOSFET with Schottky Diode Rev. A, 13-Oct-08
	SIA811ADJ-T1-GE3	375Kb / 12P	P-Channel 20 V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SIA811ADJ	375Kb / 12P	P-Channel 20 V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SIA811DJ	243Kb / 3P	P-Channel 20-V (D-S) MOSFET with Schottky Diode Rev. A, 29-Jan-07

More results

Аналогичное описание - SIA814DJ

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7160DP	109Kb / 7P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 16-Feb-09
	SI4646DY	210Kb / 9P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 18-May-09
	SIE726DF	210Kb / 10P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 13-Jul-09
Unisonic Technologies	UT4810D	201Kb / 5P	N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
Vishay Siliconix	SI4810DY	43Kb / 5P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. F, 26-May-03
	SI7720DN	552Kb / 14P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 04-Aug-08
	SI4812BDY-E3	254Kb / 9P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 29-Dec-08
Vishay Telefunken	SIS782DN	560Kb / 14P	N-Channel 30 V (D-S) MOSFET with Schottky Diode
Vishay Telefunken	SI7748DP	385Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode
Vishay Siliconix	SIS782DN	594Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode 01-Jan-2022

More results

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