SIA907EDJT datasheet(2/8 Pages) VISHAY

номер детали	SIA907EDJT

подробное описание детали	Dual P-Channel 20 V (D-S) MOSFET

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Document Number: 67874

S11-0862-Rev. A, 02-May-11

Vishay Siliconix

SiA907EDJT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

VDS/TJ

ID = - 250 µA

- 14

mV/°C

VGS(th) Temperature Coefficient

VGS(th)/TJ

2.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.5

- 1.4

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 0.5

µA

VDS = 0 V, VGS = ± 12 V

± 10

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS - 5 V, VGS = - 4.5 V

- 15

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 3.6 A

0.047

0.057



VGS = - 2.5 V, ID = - 1.5 A

0.075

0.095

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 3.6 A

11

S

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A

15

23

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A

7.1

11

Gate-Source Charge

Qgs

1.3

Gate-Drain Charge

Qgd

2.1

Gate Resistance

Rg

f = 1 MHz

1.4

7

14



Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 2.7 

ID  - 3.7 A, VGEN = - 4.5 V, Rg = 1 

13

25

ns

Rise Time

tr

15

30

Turn-Off Delay Time

td(off)

30

60

Fall Time

tf

10

15

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 2.7 

ID  - 3.7 A, VGEN = - 10 V, Rg = 1 

510

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

30

60

Fall Time

tf

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 4.5

A

Pulse Diode Forward Current

ISM

- 15

Body Diode Voltage

VSD

IS = - 3.7 A, VGS = 0 V

- 0.9

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C

15

30

ns

Body Diode Reverse Recovery Charge

Qrr

612

nC

Reverse Recovery Fall Time

ta

8.5

ns

Reverse Recovery Rise Time

tb

6.5

Аналогичный номер детали - SIA907EDJT

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SIA907EDJT	278Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 08-Feb-17
	SIA907EDJT-T1-GE3	278Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 08-Feb-17
	SIA907EDJT-T4-GE3	278Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 08-Feb-17
	SIA907EDJT	278Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 08-Feb-17

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Аналогичное описание - SIA907EDJT

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3911DV	47Kb / 4P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 18-Mar-02
	SI7913DN	67Kb / 5P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 13-Jun-05
	SI9933CDY-T1-GE3	276Kb / 10P	Dual P-Channel 20-V (D-S) MOSFET Rev. A, 04-Aug-08
	SIA911EDJ	122Kb / 7P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 09-Mar-09
	SI6981DQ	107Kb / 6P	Dual P-Channel 20-V (D-S) MOSFET Rev. B, 02-Jun-08
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	SIA923EDJ	120Kb / 7P	Dual P-Channel 20 V (D-S) MOSFET Rev. A, 19-Jul-10
	SI3981DV	86Kb / 6P	Dual P-Channel 20-V (D-S) MOSFET Rev. C, 29-Mar-04
	SIB911DK	232Kb / 5P	Dual P-Channel 20-V (D-S) MOSFET Rev. A, 14-May-07
VBsemi Electronics Co.,...	VBKB4265	380Kb / 6P	Dual P-Channel 20-V (D-S) MOSFET
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