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SiC779DB датащи(PDF) 3 Page - Vishay Siliconix

номер детали SiC779DB
подробное описание детали  Integrated DrMOS Power Stage
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SiC779DB датащи(HTML) 3 Page - Vishay Siliconix

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Document Number: 67538
S11-0703-Rev. B, 18-Apr-11
www.vishay.com
3
Vishay Siliconix
SiC779
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Typical limits are established by characterization and are not production tested.
b. Guaranteed by design.
Note:
a. Min. and Max. are not 100 % production tested.
ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Test Conditions Unless Specified
VDSBL# = VSMOD = 5 V,
VIN = 12 V, VVDRV = VVCIN 5 V,
TA = 25 °C
Min.
Typ.a
Max.
Unit
Power Supplies
VCIN Control Input Current
IVCIN
VDSBL# = 0 V, no switching
60
µA
VDSBL# = 5 V, no switching
400
VDSBL# = 5 V, fs = 300 kHz, D = 0.1
600
Drive Input Current (Dynamic)
IVDRV
fs = 300 kHz, D = 0.1
15
22
mA
fs = 1000 kHz, D = 0.1
48
70
Bootstrap Supply
Bootstrap Switch Forward Voltage
VBS Diode
VVCIN = 5 V, forward bias current 2 mA
0.60
0.75
V
Control Inputs (PWM, DSBL#, SMOD)
PWM Rising Threshold
Vth_pwm_r
3.5
3.8
4.2
V
PWM Falling Threshold
Vth_pwm_f
0.8
1.0
1.2
PWM Tristate Rising Threshold
Vth_tri_r
0.9
1.3
1.8
PWM Tristate Falling Threshold
Vth_tri_f
3.4
3.7
4.0
PWM Tristate Rising Threshold Hysteresis
Vhys_tri_r
300
mV
PWM Tristate Falling Threshold Hysteresis
Vhys_tri_f
170
Tristate Hold-Off Timeb
tTSHO
150
ns
PWM Input Current
IPWM
VPWM = 5 V
250
µA
VPWM = 0 V
- 250
SMOD, DSBL# Logic Input Voltage
VLOGIC_LH
Rising (low to high)
2
V
VLOGIC_LH
Falling (high to low)
0.8
Pull Down Impedance
RTHDN
5 k
 resistor pull-up to V
CIN
40
THDN Output Low
VTHDNL
0.07
V
Protection
Thermal Warning Flag Set
150
°C
Thermal Warning Flag Clear
135
Thermal Warning Flag Hysteresis
15
Under Voltage Lockout
VUVLO
Rising, on threshold
3.3
3.9
V
Under Voltage Lockout
Falling, off threshold
2.5
2.9
Under Voltage Lockout Hysteresis
VUVLO_HYST
400
mV
High Side Gate Discharge Resistorb
RHS_DSCRG
VVDRV = VVCIN = 0 V; VIN = 12 V
20.2
k
TIMING SPECIFICATIONS
Parameter
Symbol
Test Conditions Unless Specified
VVDRV = VVCIN = VDSBL# = 5 V,
VVIN = 12 V, TA = 25 °C
Min.
Typ.
Max.
Unit
Turn Off Propagation Delay
High Sidea
td_on_HS
25 % of PWM to 90 % of GH
10
20
30
ns
Rise Time High Side
tr_HS
10 % to 90 % of GH
8
Fall Time High Side
tf_HS
90 % to 10 % of GH
8
Turn Off Propagation Delay
Low Sidea
td_off_LS
75 % of PWM to 90 % of GL
10
20
30
Rise Time Low Side
tr_LS
10 % to 90 % of GL
15
Fall Time Low Side
tf_LS
90 % to 10 % of GL
8
Dead Time Rising
tdead_on
10 % of GL to 10 % of GH
15
Dead Time Falling
tdead_off
10 % of GH to 10 % of GL
15


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