TSHG5410 datasheet(4/5 Pages) VISHAY

номер детали	TSHG5410

подробное описание детали	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

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производитель	VISHAY [Vishay Siliconix]

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For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81811

4

Rev. 1.2, 08-Jul-09

TSHG5410

Vishay Semiconductors High Speed Infrared Emitting Diode,

850 nm, GaAlAs Double Hetero

PACKAGE DIMENSIONS in millimeters

Ø 5 ± 0.15

Area not plane

2.54 nom.

A

C

0.5

+ 0.15

- 0.05

1.1 ± 0.25

R2.49 (sphere)

specifications

according to DIN

technical drawings

Drawing-No.: 6.544-5258.11-4

Issue: 2; 19.05.09

21797

0.5

+ 0.15

- 0.05

Аналогичный номер детали - TSHG5410

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	TSHG5410	112Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Rev. 1.1, 04-Sep-08
	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
	TSHG5410	108Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5410	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	TSHG6410	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 08-Jul-09
	TSHG6200	116Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.6, 04-Dec-07
	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
	TSHG6200	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5210	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG6410	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG5210	113Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHG6210	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	VSMG3700	127Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.4, 06-Oct-10
	TSHG6400	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.1, 29-Jun-09
	TSHG6400	106Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 23-Aug-11