BAP64-05W datasheet(1/2 Pages) HTSEMI

номер детали	BAP64-05W

подробное описание детали	PIN DIODES

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PIN DIODES

FEATURES

High voltage, current controlled

RF resistor for RF attenuators and switches

Low diode capacitance

Low diode forward resistance

Low series inductance

For applications up to 3 GHz

RF attenuators and switches

Marking:

5W

Maximum Ratings @TA=25

℃

Parameter

Symbol

Limits

Unit

Continuous reverse voltage

VR

175

V

Continuous Forward Current

IF

100

mA

Power Dissipation

PD

200

mW

Thermal Resistance Junction to Ambient

RθJA

625

℃/W

Junction temperature

Tj

150

℃

Storage temperature

TSTG

-65~+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Reverse voltage leakage current

IR

VR=175V

VR=20V

10

1

µA

Forward voltage

VF

IF=50mA

1.1

V

Diode capacitance

Cd

VR=0, f=1MHz

VR=1V, f=1MHz

VR=20V, f=1MHz

0.52

0.37

0.23

0.35

pF

Diode forward resistance

rD

IF=0.5mA, f=100MHz

;note1

IF=1mA, f=100MHz

;note1

IF=10mA, f=100MHz

;note1

IF=100mA, f=100MHz

;note1

20

10

2

0.7

40

20

3.8

1.35

Ω

Charge carrier life time

τL

when switched from

IF = 10 mA to IR = 6 mA; RL =

100 Ω; measured at IR =3mA

1.55

μS

Series inductance

LS

IF=100mA, f=100MHz

1.4

nH

SOT-323

Note 1.

Guaranteed on AQL basis: inspection level S4,AQL 1.0.

BAP64-05W

１　

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BAP64-05W датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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