BTS432E2 datasheet(4/13 Pages) SIEMENS

номер детали	BTS432E2

подробное описание детали	Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown)

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производитель	SIEMENS [Siemens Semiconductor Group]

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BTS 432 E2

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C,

Vbb = 12 V unless otherwise specified

min

typ

max

Semiconductor Group

4

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)8),

( max 400

µs if VON > VON(SC) )

IL(SCp)

Tj =-40°C:

Tj =25°C:

Tj =+150°C:

--

24

--

44

--

74

--

A

Repetitive short circuit current limit

IL(SCr)

Tj = Tjt (see timing diagrams, page 10)

22

35

--

A

Short circuit shutdown delay after input pos. slope

VON > VON(SC),

Tj =-40..+150°C:

min value valid only, if input "low" time exceeds 30

µs

td(SC)

80

--

400

µs

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL), IL= 30 mA

VON(CL)

--

58

--

V

Short circuit shutdown detection voltage

(pin 3 to 5)

VON(SC)

--

8.3

--

V

Thermal overload trip temperature

Tjt

150

--

°C

Thermal hysteresis

∆T

jt

--

10

--

K

Inductive load switch-off energy dissipation9),

Tj Start = 150 °C, single pulse

Vbb = 12 V:

Vbb = 24 V:

EAS

ELoad12

ELoad24

--

1.7

1.3

1.0

J

Reverse battery (pin 3 to 1) 10)

-

Vbb

--

32

V

Integrated resistor in Vbb line

Rbb

--

120

--

Ω

Diagnostic Characteristics

Open load detection current

Tj=-40 °C:

(on-condition)

Tj=25..150°C:

IL (OL)

2

--

900

750

mA

8

)

Short circuit current limit for max. duration of 400

µs, prior to shutdown (see td(SC) page 4)

9)

While demagnetizing load inductance, dissipated energy in PROFET is

EAS=

∫ VON(CL) * iL(t) dt, approx.

EAS= 1/2 * L * I

2

L

* (

VON(CL)

VON(CL) - Vbb

), see diagram page 8

10

) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional

external GND-resistor (150

Ω). Input and Status currents have to be limited (see max. ratings page 2 and

circuit page 7).

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