BUZ103SL-4 datasheet(3/8 Pages) SIEMENS

номер детали	BUZ103SL-4

подробное описание детали	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

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производитель	SIEMENS [Siemens Semiconductor Group]

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3 / 8 page

Semiconductor Group

3

05/Sep/1997

BUZ 103SL-4

Preliminary data

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 0 A

gfs

tbd

--

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

770

960

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

230

290

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

130

165

Turn-on delay time

VDD = 30 V, VGS = 5 V, ID = 4.8 A

RG = 6.5 Ω

td(on)

-

50

75

ns

Rise time

VDD = 30 V, VGS = 5 V, ID = 4.8 A

RG = 6.5 Ω

tr

-

30

45

Turn-off delay time

VDD = 30 V, VGS = 5 V, ID = 4.8 A

RG = 6.5 Ω

td(off)

-

20

30

Fall time

VDD = 30 V, VGS = 5 V, ID = 4.8 A

RG = 6.5 Ω

tf

-

40

60

Gate charge at threshold

VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

Qg(th)

-

1.33

2

nC

Gate charge at 5.0 V

VDD = 40 V, ID = 4.8 A, VGS =0 to 5 V

Qg(5)

-

20

30

Gate charge total

VDD = 40 V, ID = 4.8 A, VGS =0 to 10 V

Qg(total)

-

32.6

50

Gate plateau voltage

VDD = 40 V, ID = 28 A

V(plateau)

-

2.94

-

V

Аналогичный номер детали - BUZ103SL-4

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BUZ103SL	119Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

More results

Аналогичное описание - BUZ103SL-4

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ100SL-4	89Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ102SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ104SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
	BUZ103AL	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ102AL	182Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ102	183Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ100	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ101S	69Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ104L	209Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)

More results

BUZ103SL-4 датащи(PDF) 3 Page - Siemens Semiconductor Group

BUZ103SL-4 датащи(HTML) 3 Page - Siemens Semiconductor Group

Аналогичный номер детали - BUZ103SL-4

Аналогичное описание - BUZ103SL-4

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