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BUZ11S2 датащи(PDF) 1 Page - Siemens Semiconductor Group

номер детали BUZ11S2
подробное описание детали  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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производитель  SIEMENS [Siemens Semiconductor Group]
домашняя страница  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ11S2 датащи(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
07/96
BUZ 11 S2
Not for new design
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 11 S2
60 V
30 A
0.04
Ω
TO-220 AB
C67078-S1301-A5
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 29 °C
ID
30
A
Pulsed drain current
TC = 25 °C
IDpuls
120
Avalanche current,limited by
Tjmax
IAR
30
Avalanche energy,periodic limited by
Tjmax
EAR
1.9
mJ
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
L = 15.6 µH, Tj = 25 °C
EAS
14
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 °C
Ptot
75
W
Operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 1.67
K/W
Thermal resistance, chip to ambient
RthJA
≤ 75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56


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