поискавой системы для электроныых деталей |
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TLP291-4 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP291-4 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 14 page TLP291-4 2011-09-08 3 Absolute Maximum Ratings (Ta = 25℃) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF(RMS) 50 mA Forward Current Derating ∆IF /°C −0.67 (Ta≥50°C) mA /°C Pulse Forward Current (Note2) IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Collector-Emitter Voltage VCEO 80 V Emitter-Collector Voltage VECO 7 V Collector Current IC 50 mA Collector Power Dissipation (1 Circuit) PC 100 mW Collector Power Dissipation Derating(Ta≥25°C) (1 Circuit) ∆PC /°C −1.0 mW /°C Junction Temperature Tj 125 °C Operating Temperature Range Topr −55 to 110 °C Storage Temperature Range Tstg −55 to 125 °C Lead Soldering Temperature Tsol 260 (10s) °C Total Package Power Dissipation (1 Circuit) PT 170 mW Total Package Power Dissipation Derating (Ta≥25°C) (1 Circuit) ∆PT /°C −1.7 mW /°C Isolation Voltage (Note3) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width 100μs, frequency 100Hz Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together. Individual Electrical Characteristics (Ta = 25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage VF IF = 10 mA 1.1 1.20 1.4 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 80 — — V Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V, — 0.01 0.1 μA Collector Dark Current (Note5) ICEO VCE = 48 V, Ta = 85°C — 2 50 μA Capacitance (Collector to Emitter) CCE V = 0, f = 1 MHz — 10 — pF |
Аналогичный номер детали - TLP291-4 |
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Аналогичное описание - TLP291-4 |
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