SI7703EDN datasheet(1/13 Pages) VISHAY

номер детали	SI7703EDN

подробное описание детали	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Vishay Siliconix

Si7703EDN

Document Number: 71429

S-83043-Rev. C, 22-Dec-08

www.vishay.com

1

Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•TrenchFET® Power MOSFETS: 1.8 V Rated

•

ESD Protected: 4500 V

•

Ultra-Low Thermal Resistance, PowerPAK®

Package with Low 1.07 mm Profile

APPLICATIONS

•

Charger Switching

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 20

0.048 at VGS = - 4.5 V

- 6.3

0.068 at VGS = - 2.5 V

- 5.3

0.090 at VGS = - 1.8 V

- 4.6

SCHOTTKY PRODUCT SUMMARY

VKA (V)

Vf (V)

Diode Forward Voltage

IF (A)

20

0.48 V at 0.5 A

1.0

1

2

3

4

5

6

7

8

A

S

G

K

D

3.30 mm

Bottom View

PowerPAK 1212-8

Ordering Information: Si7703EDN-T1-E3 (Lead (Pb)-free)

Si7703EDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

K

A

P-Channel MOSFET

S

D

G

3 k

Ω

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage (MOSFET and Schottky)

VDS

- 20

V

Reverse Voltage (Schottky)

VKA

20

Gate-Source Voltage (MOSFET)

VGS

± 12

Continuous Drain Current (TJ = 150 °C) (MOSFET)

a

TA = 25 °C

ID

- 6.3

- 4.3

A

TA = 85 °C

- 4.5

- 3.1

Pulsed Drain Current (MOSFET)

IDM

- 20

Continuous Source Current (MOSFET Diode Conduction)a

IS

- 2.3

- 1.1

Average Foward Current (Schottky)

IF

1.0

Pulsed Foward Current (Schottky)

IFM

7

Maximum Power Dissipation (MOSFET)a

TA = 25 °C

PD

2.8

1.3

W

TA = 85 °C

1.5

0.7

Maximum Power Dissipation (Schottky)a

TA = 25 °C

2.0

1.1

TA = 85 °C

1.0

0.6

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendationsb,c

260

Аналогичный номер детали - SI7703EDN

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Vishay Siliconix	SI7703EDN	194Kb / 3P	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Rev. B, 10-Apr-06

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Аналогичное описание - SI7703EDN

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