2N3904

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-027, D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

6

V

Collector Current

200

mA

Collector Dissipation

625

mW

Junction Temperature

150

°С

Operating and Storage Temperature

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

60

V

Collector-Emitter Breakdown Voltage

40

V

Emitter-Base Breakdown Voltage

6

V

Collector-Emitter Saturation Voltage

(Note)

0.2

V

0.3

V

Base-Emitter Saturation Voltage

(Note)

0.65

0.85

V

0.95

V

Collector Cut-off Current

50

nA

Base Cut-off Current

50

nA

DC Current Gain (note)

40

70

100

300

60

30

Current Gain Bandwidth Product

300

MHz

Output Capacitance

4

pF

Turn on Time

70

ns

Turn off Time

250

ns

Note: Pulse test: Pulse Width≦300

μs, Duty Cycle≦2%