поискавой системы для электроныых деталей |
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TS3001ITD822T датащи(PDF) 3 Page - Touchstone Semiconductor Inc |
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TS3001ITD822T датащи(HTML) 3 Page - Touchstone Semiconductor Inc |
3 / 10 page TS3001 TS3001DS r1p0 Page 3 RTFDS ELECTRICAL CHARACTERISTICS VDD = 1V, VCNTRL = VDD, RSET = 4.32MΩ, RLOAD(FOUT) = Open Circuit, CLOAD(FOUT) = 0pF, CLOAD(PWM) = 0pF unless otherwise noted. Values are at TA = 25°C unless otherwise noted. See Note 1. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage VDD 0.9 1 1.8 V Supply Current IDD 1 1.5 µA -40°C ≤ T A ≤ 85°C 2.8 VCNTRL = 0.15 x VDD 2.1 3.7 -40°C ≤ T A ≤ 85°C 5.4 FOUT Period tFOUT 38.5 41.6 µs -40°C ≤ T A ≤ 85°C 36.8 44.6 FOUT Period Line Regulation Δt FOUT/V 1V ≤ V DD ≤ 1.8V 1.8 %/V FOUT Period Temperature Coefficient Δt FOUT/ΔT 0.021 %/°C PWMOUT Duty Cycle DC(PWMOUT) VCNTRL = 0.03 x VDD 6 10.5 15 % VCNTRL = 0.15 x VDD 45 49.8 54.2 VCNTRL = 0.27 x VDD 84 91 98 FOUT, PWMOUT Rise Time tRISE See Note 2, CL = 15pF 8.6 ns FOUT, PWMOUT Fall Time tFALL See Note 2, CL = 15pF 7.9 ns FOUT Jitter See Note 3 0.08 % RSET Pin Voltage V(RSET) 0.3 V CNTRL Output Current ICNTRL 25 45 nA -40°C ≤ T A ≤ 85°C 100 PWMOUT Enable VPWM_EN (VDD - VCNTRL ), 0.9V < VDD < 1.8V 375 mV PWMOUT Disable VPWM_DIS (VDD - VCNTRL ), 0.9V < VDD < 1.8V 131 mV High Level Output Voltage, FOUT and PWMOUT VDD - VOH IOH = 1mA 160 mV Low-level Output Voltage, FOUT and PWMOUT VOL IOL = 1mA 140 mV Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = TMIN to TMAX, as specified. Note 2: Output rise and fall times are measured between the 10% and 90% of the VDD power-supply voltage levels. The specification is based on lab bench characterization and is not tested in production. Note 3: Timing jitter is the ratio of the peak-to-peak variation of the period to the mean of the period. The specification is based on lab bench characterization and is not tested in production. |
Аналогичный номер детали - TS3001ITD822T |
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Аналогичное описание - TS3001ITD822T |
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