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6T08G-B датащи(PDF) 5 Page - Nell Semiconductor Co., Ltd

номер детали 6T08G-B
подробное описание детали  TRIACs, 6A Snubberless, Logic Level and Standard
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производитель  NELLSEMI [Nell Semiconductor Co., Ltd]
домашняя страница  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

6T08G-B датащи(HTML) 5 Page - Nell Semiconductor Co., Ltd

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-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
I
,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C ]
GT H L
j
IGT
IH& IL
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
BW/CW
SW
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
C
B
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
j
(dI/dt)c [T s
j
T (°C)
j
T (°C)
j
SEMICONDUCTOR
6T Series RoHS
RoHS
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)C (typical values)
(Standard types).
Fig.10 Relative variation of critical rate decrease of
main current versus junction temperature .
1
10
100
1000
0
10
20
30
40
50
60
70
I
(A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
0.01
0.10
1.00
10.00
10
100
1000
I
(A), I t (A s)
TSM
2
T initial=25°C
j
ITSM
dI/dt limitation:
50A/µs
2
I t
T =105°C
c
2
t (ms)
p
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
2
and corresponding value of l t.


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